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    •   BracU IR
    • School of Engineering and Computer Science (SECS)
    • Department of Electrical and Electronic Engineering (EEE)
    • Thesis & Report, BSc (Electrical and Electronic Engineering)
    • View Item
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    Single molecular transistor

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    12221001, 12321027_EEE.pdf (1.806Mb)
    Date
    2017-12
    Publisher
    BARC University
    Author
    Mitra, Kangkan
    Hossain, Farheen
    Metadata
    Show full item record
    URI
    http://hdl.handle.net/10361/9117
    Abstract
    Eectron transport through single particles is emphatically influenced by single-electron charging and the vitality level quantization. In this proposition, we research electron transport in single particle transistors made with a few unique particles, including fullerene particles and single Co particles with various lengths. To perform transport estimations on these little (<3 nm) particles, cathodes with a hole that is 1~2 nm wide are manufactured using the electro migration-intersection system. We likewise considered single-walled carbon nanotube gadgets that are manufactured utilizing a more customary strategy. At low temperatures, most single atom gadgets show Coulomb blockade with discrete conductance tops that relate to quantum excitations of the atom. The cause of the watched quantum excitation changes from atom to particle contingent upon how burrowing electrons collaborate with different sub-atomic degrees of opportunity. Vibration excitation is the one that is most much of the time watched. The most conspicuous vibration excitation was recognized as the skipping ball mode in C60 and C70 transistors, though it was allotted to the interchange extending mode in C140 transistors. Attractive excitation was additionally considered, and the turn condition of a solitary Co particle was dictated by breaking down the Zeeman part in an attractive field. The general conductance of single particle transistors is resolved predominantly by the coupling with anodes. In single Co transistors, the coupling could be controlled by changing the length of protecting handles. With a more drawn out handle, the E vi conductance is lower as the single Co shapes a quantum dab. With a shorter handle, the coupling amongst Co and cathodes and also the general conductance turns out to be huge and the Kondo impact was watched. Finally, the conductance of carbon nanotubes was examined in two extraordinary temperature administrations. At low temperatures, they shape a solitary quantum dab (p-doped) or a twofold quantum dab (n-doped) because of a nearby doping by the cathodes. In room temperature estimations, a profoundly proficient electrolyte door was utilized to explore the field impact transistor properties of carbon nanotubes, which revealed phenomenal gadget exhibitions.
    Keywords
    Single molecular transistor; Molecular electronics
     
    Description
    This thesis report is submitted in partial fulfilment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2017.
     
    Cataloged from PDF version of thesis.
     
    Includes bibliographical references (page 35-39).
    Department
    Department of Electrical and Electronic Engineering, BRAC University
    Collections
    • Thesis & Report, BSc (Electrical and Electronic Engineering)

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