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    • Thesis & Design Report, BSc (Electrical and Electronic Engineering)
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    •   BracU IR
    • School of Engineering (SoE)
    • Department of Electrical and Electronic Engineering (EEE)
    • Thesis & Design Report, BSc (Electrical and Electronic Engineering)
    • View Item
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    Temperature dependence of the transient characteristics in NPT IGBT using linear and parabolic model

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    12310008, 12121123 & 12121036_EEE.pdf (1.901Mb)
    Date
    2016-12-14
    Publisher
    BRAC University
    Author
    Tania, Shoulin
    Saha, Dipraj
    Faiza, Fahmida
    Metadata
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    URI
    http://hdl.handle.net/10361/7734
    Abstract
    To be considered as an efficient assistant, power semiconductor devices are being used in many power converter applications and technologies, particularly with high variable loads. In this regard, monitoring temperature of the device junction is indispensable. In this literature review, the characteristics of Non Punch Through (NTP) Insulated Gate Bipolar Transistor (IGBT) during the turn off state has been analyzed with the change in temperature in different carrier lifetimes. Moreover, the anode voltage, anode current, carrier charge and power loss characteristics of IGBT is shown by comparing the ideal linear model and parabolic model with temperature variance.
    Keywords
    Temperature; Transient characteristics; NPT IGBT; Parabolic model
     
    Description
    This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
     
    Cataloged from PDF version of thesis report.
     
    Includes bibliographical references (page 59-60).
    Department
    Department of Electrical and Electronic Engineering, BRAC University
    Collections
    • Thesis & Design Report, BSc (Electrical and Electronic Engineering)

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