Abstract:
To be considered as an efficient assistant, power semiconductor devices are being used in many power converter applications and technologies, particularly with high variable loads. In this regard, monitoring temperature of the device junction is indispensable. In this literature review, the characteristics of Non Punch Through (NTP) Insulated Gate Bipolar Transistor (IGBT) during the turn off state has been analyzed with the change in temperature in different carrier lifetimes. Moreover, the anode voltage, anode current, carrier charge and power loss characteristics of IGBT is shown by comparing the ideal linear model and parabolic model with temperature variance.
