Investigation into IGBT transient characteristics and calculation of switching power loss

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Date
2016-04-19
Publisher
BRAC University
Author
Hasan, Rifatul
Mustary, Sharmin
Bristy, Nigar Sultana
Metadata
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URI
http://hdl.handle.net/10361/7717
Abstract
In many power converter applications, analysis of switching power loss of IGBT is considered desirable. In our thesis, the switching behavior is analyzed through investigation into transient anode voltage modeling of Non-Punch Through (NTP) Insulated Gate Bipolar Transistor (IGBT).Parabolic Profile for excess carrier concentration has been compared with the linear one in the baser. With the comparison, Transient turn-off anode voltage is analyzed through parabolic and linear approach. Finally transient switching power loss is estimated through the incorporation of transient current.
Keywords
IGBT transient; Switching power; Non-punch through (NTP)
 
Description
This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Computer Science and Engineering, 2016.
 
Cataloged from PDF version of thesis report.
 
Includes bibliographical references (page 72-74).
Department
Department of Electrical and Electronic Engineering, BRAC University
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