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    • Thesis & Report, BSc (Electrical and Electronic Engineering)
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    •   BracU IR
    • School of Engineering (SoE)
    • Department of Electrical and Electronic Engineering (EEE)
    • Thesis & Report, BSc (Electrical and Electronic Engineering)
    • View Item
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    Investigation into IGBT transient characteristics and calculation of switching power loss

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    12121113, 12121167 & 11321033_EEE.pdf (3.332Mb)
    Date
    2016-04-19
    Publisher
    BRAC University
    Author
    Hasan, Rifatul
    Mustary, Sharmin
    Bristy, Nigar Sultana
    Metadata
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    URI
    http://hdl.handle.net/10361/7717
    Abstract
    In many power converter applications, analysis of switching power loss of IGBT is considered desirable. In our thesis, the switching behavior is analyzed through investigation into transient anode voltage modeling of Non-Punch Through (NTP) Insulated Gate Bipolar Transistor (IGBT).Parabolic Profile for excess carrier concentration has been compared with the linear one in the baser. With the comparison, Transient turn-off anode voltage is analyzed through parabolic and linear approach. Finally transient switching power loss is estimated through the incorporation of transient current.
    Keywords
    IGBT transient; Switching power; Non-punch through (NTP)
     
    Description
    This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Computer Science and Engineering, 2016.
     
    Cataloged from PDF version of thesis report.
     
    Includes bibliographical references (page 72-74).
    Department
    Department of Electrical and Electronic Engineering, BRAC University
    Collections
    • Thesis & Report, BSc (Electrical and Electronic Engineering)

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