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    •   BracU IR
    • School of Engineering (SoE)
    • Department of Electrical and Electronic Engineering (EEE)
    • Thesis & Report, BSc (Electrical and Electronic Engineering)
    • View Item
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    Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function

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    13121146,13121073,13121053_EEE.pdf (2.287Mb)
    Date
    2016
    Publisher
    BRAC University
    Author
    Afsin, Muntasirul Haque
    Kabir, Shahriar
    Siddiqui, Aminul Haque
    Metadata
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    URI
    http://hdl.handle.net/10361/7696
    Abstract
    This paper analyses the C-V characteristics by altering the gate oxide thickness and metal workfunction used in the gate of non-planer, multi-gate InGaAs channel Quantum Well Field-Effect Transistor (QWFET). In this paper, we tried to distinguish the different aspects of modern day transistors which lead us to the conclusion about the upcoming worldwide uses of QWFET in many electronic devices. Simulations were carried out using COMSOL Multiphysics linked with MATLAB simulator by incorporating various electrostatic parameters of different semiconductor materials in suitable domains with suitable boundary conditions. Poisson solver coupled with Schrodinger equation is used to obtain charge density in each point of the channel region of QWFET, and integrating the overall charge density we obtain total charge. In this way, charge accumulated in the channel region is obtained by altering gate voltage and a graph of charge versus gate voltage is obtained, which is further differentiated with respect to gate voltage to obtain graphs of gate capacitance versus gate voltage by changing the above mentioned parameters.
    Keywords
    Quantum Well Field-Effect Transistor (QWFET); Electrical and electronic engineering
     
    Description
    This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.
     
    Cataloged from PDF version of thesis report.
     
    Includes bibliographical references (page 51-52).
    Department
    Department of Electrical and Electronic Engineering, BRAC University
    Collections
    • Thesis & Report, BSc (Electrical and Electronic Engineering)

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