Investigation of CNTFET performance with gate control coefficient effect
Publisher© 2014 Sumy State University
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CitationKhan, S. A., Hasan, M., & Mominuzzaman, S. M. (2014). Investigation of CNTFET performance with gate control coefficient effect. Journal of Nano- and Electronic Physics, 6(2)
For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes.
DescriptionThis article was published in Journal of Nano- and Electronic Physics [© 2014 Sumy State University] The article website is at: http://article.sapub.org/10.5923.j.nn.20140402.03.html
DepartmentDepartment of Computer Science and Engineering, BRAC University
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