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    Investigation of CNTFET performance with gate control coefficient effect

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    Date
    2014
    Publisher
    © 2014 Sumy State University
    Author
    Khan, Sabbir Ahmed
    Hasan, Md. Rakibul
    Mominuzzaman, Sharif Mohammad
    Metadata
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    URI
    http://hdl.handle.net/10361/7462
    Citation
    Khan, S. A., Hasan, M., & Mominuzzaman, S. M. (2014). Investigation of CNTFET performance with gate control coefficient effect. Journal of Nano- and Electronic Physics, 6(2)
    Abstract
    For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes.
    Keywords
    CNTFET; Drain current; Gate control coefficient; Transconductance
     
    Description
    This article was published in Journal of Nano- and Electronic Physics [© 2014 Sumy State University] The article website is at: http://article.sapub.org/10.5923.j.nn.20140402.03.html
    Publisher Link
    http://article.sapub.org/10.5923.j.nn.20140402.03.html
    Department
    Department of Computer Science and Engineering, BRAC University
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