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    Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: effect of relative dielectric constant

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    Date
    2015
    Publisher
    © 2015 Institute of Electrical and Electronics Engineers Inc.
    Author
    Ahmed, Sheikh Ziauddin
    Shawkat, Mashiyat Sumaiya
    Chowdhury, Md Iramul Hoque
    Mominuzzaman, Sharif Mohammad
    Metadata
    Show full item record
    URI
    http://hdl.handle.net/10361/7007
    Citation
    Ziauddin Ahmed, S., Shawkat, M. S., Chowdhury, M. I. H., & Mominuzzaman, S. M. (2015). Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: Effect of relative dielectric constant. Paper presented at the 2015 IEEE 10th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015, 384-387. doi:10.1109/NEMS.2015.7147449
    Abstract
    Graphene Nanoribbon (GNR) and Carbon Nanotube (CNT) are currently being considered as two of the most promising options to replace silicon technology. Silicon technology is faced with scaling limits and other material issues which hinder the development of transistor technology. In this paper, the effect of relative dielectric constant on the performances of ballistic schottky barrier Graphene Nanoribbon field-effect transistor (GNRFET) and Carbon Nanotube field-effect transistor (CNTFET) is studied and a comparative analysis between the two transistors is provided. It has been observed that using a gate material with higher relative dielectric constant leads to a higher on-state drain current for both the transistors. However, CNTFET has higher on-state drain current compared to GNRFET. Also in this literature, the on and off-state current ratios of both the transistors are calculated and plotted to further differentiate between the performances of GNRFET and CNTFET.
    Keywords
    CNTFET; GNRFET; Graphene nanoribbon; Carbon nanoribbon
     
    Description
    This conference paper was presented in the 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2015; Xi'an; China; 7 April 2015 through 11 April 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/NEMS.2015.7147449
    Publisher Link
    http://ieeexplore.ieee.org/document/7147449/
    DOI
    10.1109/NEMS.2015.7147449
    Department
    Department of Electrical and Electronic Engineering
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    • Conference Paper

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