• Login
    • Library Home
    View Item 
    •   BracU IR
    • BracU Faculty Publications
    • Raktim Kumar Mondol
    • Conference Paper
    • View Item
    •   BracU IR
    • BracU Faculty Publications
    • Raktim Kumar Mondol
    • Conference Paper
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Quantum capacitance in strained armchair Graphene nanoribbon considering Edge effect

    Thumbnail
    Date
    2015
    Publisher
    © 2015 Institute of Electrical and Electronics Engineers Inc.
    Author
    Mondol, Raktim Kumar
    Hassan, Asif S.
    Hasan, Rifat
    Metadata
    Show full item record
    URI
    http://hdl.handle.net/10361/6973
    Citation
    Mondol, R. K., Hassan, A., & Hasan, R. (2015). Quantum capacitance in strained armchair graphene nanoribbon considering edge effect. Paper presented at the Proceedings of 2015 IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015, doi:10.1109/ICECCT.2015.7225950
    Abstract
    Armchair Graphene nanoribbons(A-GNRs) are now widely used in nanoscale transistor because of its semiconducting behavior and fast switching speed. The most important parameter which impedes carrier movement through the channel is 'capacitance' after its sustainable value. Earlier classical capacitance was assumed as only one of the capacitance in nanoscale transistor. But when the device is operated by a source; classical capacitance goes in vain for overall observing the carrier statistics. Here another capacitance must be considered which 'Quantum capacitance' is. Edge effect which is caused during fabrication for the deviation of true structure. In previous literature, it is quantum capacitance calculated by considering edge effect only.But another phenomena is also appeared when GNR is subjected to a considerable strain in fabrication. In this paper we will calculate bandgap, energy , quantum capacitance and gate delay by considering strained A-GNR for corresponding source voltage.
    Keywords
    Bandgap; Classical capacitance; Edge effect; Gate delay; Graphene nanoribbon; Quantum capacitance; Strain
     
    Description
    This conference paper was presented in the 1st IEEE International Conference on Electrical, Computer and Communication Technologies, ICECCT 2015; SVS College of EngineeringCoimbatore; India; 5 March 2015 through 7 March 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/ICECCT.2015.7225950
    DOI
    10.1109/ICECCT.2015.7225950
    Department
    Department of Electrical and Electronic Engineering
    Collections
    • Conference Paper

    Copyright © 2008-2019 Ayesha Abed Library, Brac University 
    Contact Us | Send Feedback
     

     

    Policy Guidelines

    • BracU Policy
    • Publisher Policy

    Browse

    All of BracU Institutional RepositoryCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

    My Account

    LoginRegister

    Statistics

    View Usage Statistics

    Copyright © 2008-2019 Ayesha Abed Library, Brac University 
    Contact Us | Send Feedback