Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons

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Date
2015
Publisher
© 2015 Institute of Electrical and Electronics Engineers Inc.
Author
Saha, Gobinda
Saha, Atanukumar
Harun-Ur Rashid, A.B.M.
Metadata
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URI
http://hdl.handle.net/10361/6943
Citation
Saha, G., Saha, A. K., & Harun-Ur Rashid, A. B. M. (2015). Double quantum well resonant tunneling negative differential resistance device design using graphene nanoribbons. Paper presented at the IEEE-NANO 2015 - 15th International Conference on Nanotechnology, 440-443. doi:10.1109/NANO.2015.7388632
Abstract
In this paper double quantum well resonant tunneling negative differential resistance (NDR) device based on intrinsic armchair graphene nanoribbon (A-GNR) is proposed. Non-equilibrium Green's function (NEGF) based transport equation was coupled with Poisson's equation to obtain the desired device characteristics. This device shows promising results including the NDR effect at very low bias, at 0.12V, with peak current of 1.78μA and peak to valley current ratio (PVCR) of ∼20. We further show that the device performance has strong dependence on back gate voltage.
Keywords
Graphene nanoribbon; NDR; NEGF; Quantum well; Resonant tunneling
 
Description
This conference paper was presented in the 15th IEEE International Conference on Nanotechnology, IEEE-NANO 2015; Rome; Italy; 27 July 2015 through 30 July 2015 [© 2015 Institute of Electrical and Electronics Engineers Inc.] The conference paper's definite version is available at: http://10.1109/NANO.2015.7388632
DOI
10.1109/NANO.2015.7388632
Department
Department of Electrical and Electronic Engineering
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