Now showing items 1-2 of 2
Transient anode voltage modeling of IGBT and its base doping profile investigation
(© 2015 Institute of Electrical and Electronics Engineers Inc., 2015-12)
In many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping concentration through ...
Transient anode voltage modeling of IGBT and its carrier lifetime dependence
(© 2015 IEEE, 2015-11)
This work presents a minority carrier lifetime estimation technique through investigation into transient anode voltage modeling of Non-punch Through (NPT) Insulated Gate Bipolar Transistor (IGBT). Parabolic approximation ...