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    Transient anode voltage modeling of IGBT and its base doping profile investigation 

    Das, Avijit; Md Ziaur Rahman, Khan (© 2015 Institute of Electrical and Electronics Engineers Inc., 2015-12)
    In many power converter applications, study of doping concentration in the carrier storage region of IGBT is considered desirable. This paper introduces an estimation technique for base doping concentration through ...

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    AuthorDas, Avijit (1)Md Ziaur Rahman, Khan (1)SubjectBase doping concentration (1)
    Carrier storage region (1)
    Minority carrier lifetime (1)Parabolic approximation (1)Transient anode voltage (1)... View MoreDate Issued2015 (1)Has File(s)No (1)

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