I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

Ahmed, Saber; Sobhan, Rifat Binte

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I-V characteristics observation of graphene boron nitride vertical heterojunction van der waals resonant tunneling diode

Ahmed, Saber ; Sobhan, Rifat Binte

URI: http://hdl.handle.net/10361/6425

Date: 2016-08-17

Publisher: BRAC University

Abstract:

In this paper, we are going to observe the band structure and I-V characteristics of Graphene Boron Nitride Vertical Heterojunction Van der Waals Resonant Tunneling Diode. Furthermore, showing negative differential resistance (NDR) characteristics which is a very important features and advantage of resonant tunneling diodes (RTD).

Keywords:

I-V Characteristics; Negative Differential Resistance (NDR); Resonant Tunneling Diodes (RTD)

Description:

This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2016.

Cataloged from PDF version of thesis report.

Includes bibliographical references (page 46-47).