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    • Thesis & Design Report, BSc (Electrical and Electronic Engineering)
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    •   BracU IR
    • School of Engineering (SoE)
    • Department of Electrical and Electronic Engineering (EEE)
    • Thesis & Design Report, BSc (Electrical and Electronic Engineering)
    • View Item
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    Simulation based study of non-planar multigate indium gallium arsenide quantum well field effect transistors

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    11221004.pdf (758.7Kb)
    Date
    2015-07
    Publisher
    BRAC University
    Author
    Haque, Tausif Omar
    Shifain, Joyoti
    Mallick, Protim
    Islam, Md. Rizwanul
    Metadata
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    URI
    http://hdl.handle.net/10361/4330
    Abstract
    QWFETs with non-planar, multigate structures are known to provide higher electrostatistics than their conventional planar counterparts. Due to this desirable feature of the non-planar, multigate architecture, the electronics community is leaning towards transistors having gates wrapped around the channel for higher scalability and performance. In this work, 2-D Schrodinger-Poisson coupled simulations of non-planar, multigate InGaAs QWFETs were carried out using an in-house simulator to study the performance of the devices based on the C-V characteristics. The simulator was carefully benchmarked to evaluate its accuracy before carrying out the simulations. Two InGaAs QWFETs with InAlAs spacer layers were simulated. The first device had a plain InAlAs spacer layer and the second device contained a Si δ-doped layer between InAlAs spacer layer. The simulation results showed that the device with the plain InAlAs spacer layer had a threshold voltage of 0.3V and C-V characteristics similar to that of a device with an InP spacer layer which was used for benchmarking. The second device which contained a thin Si δ-doped layer within the InAlAs spacer layer was simulated next. From the simulation results, it was seen that the device had a threshold voltage of 0.2V and an effective improvement in C-V characteristics was also observed compared to the device with plain InAlAs layer.
    Keywords
    Electrical and electronic engineering; Simulation
     
    Description
    This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2015.
     
    Cataloged from PDF version of thesis report.
     
    Includes bibliographical references (page 47-48).
    Department
    Department of Electrical and Electronic Engineering, BRAC University
    Collections
    • Thesis & Design Report, BSc (Electrical and Electronic Engineering)

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