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Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction

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dc.contributor.advisor Mominuzzaman, Sharif Mohammad
dc.contributor.author Rouf, Nirjhor Tahmidur
dc.contributor.author Deep, Ashfaqul Haq
dc.contributor.author Hassan, Rusafa Binte
dc.date.accessioned 2014-02-16T10:29:15Z
dc.date.available 2014-02-16T10:29:15Z
dc.date.copyright 2013
dc.date.issued 2013-09
dc.identifier.other ID 10121002
dc.identifier.other ID 10121024
dc.identifier.other ID 10221077
dc.identifier.uri http://hdl.handle.net/10361/2937
dc.description This thesis report is submitted in partial fulfillment of the requirements for the degree of Bachelor of Science in Electrical and Electronic Engineering, 2013. en_US
dc.description Cataloged from PDF version of thesis report.
dc.description Includes bibliographical references (page 103-112).
dc.description.abstract The need for technological advancement in the field of electronics has been ever increasing. Till now silicon has been the prime material of choice for meeting the current demands. However, silicon has its own limitations; Silicon based integrated circuits and the scaling of silicon MOSFET design faces complications like tunneling effect, gate oxide thickness effect etc. which has given the scope for new materials to emerge. The growing academic interest in carbon nanotubes (CNT) as a promising novel class of electronic material has led to significant progress in the understanding of CNT physics including ballistic and non-ballistic electron transport characteristics. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Non-ballistic CNT transistors have been considered, and extended circuit-level models which can capture both ballistic and non-ballistic electron transport phenomenon, including elastic, phonon scattering, strain and tunneling effects, have been developed. The purpose of this paper is to establish a comparative analysis of the transport characteristics of ballistic and non-ballistic carbon nanotubes. The simulation is carried out using MATLAB and the main focus is on the changes in the I-V characteristic curves of elastic scattering effect, bandgap strain effect, tunneling effect and the overall combined effect, varying the parameters such as gate oxide thickness, temperature, dielectric constant, and chirality. The obtained results were then compared to their respective ballistic results. We verified our work by further comparison of our findings with other established academic papers published under the same category. en_US
dc.description.statementofresponsibility Nirjhor Tahmidur Rouf
dc.description.statementofresponsibility Ashfaqul Haq Deep
dc.description.statementofresponsibility Rusafa Binte Hassan
dc.format.extent 154 pages
dc.language.iso en en_US
dc.publisher BRAC University en_US
dc.rights BRAC University thesis are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission.
dc.subject Electrical and electronic engineering
dc.title Current-Voltage characteristics of carbon Nanotube field effect transistor considering Non-Ballistic conduction en_US
dc.type Thesis en_US
dc.contributor.department Department of Electrical and Electronic Engineering, BRAC University
dc.description.degree B. Electrical and Electronic Engineering


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