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Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function
(BRAC University, 2016)
This paper analyses the C-V characteristics by altering the gate oxide thickness and metal workfunction used in the gate of non-planer, multi-gate InGaAs channel Quantum Well Field-Effect Transistor (QWFET). In this paper, ...