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    Simulation based electrostatic study of different multigate quantumwell field effect transistors by changing the gate oxide thickness and metal work function 

    Afsin, Muntasirul Haque; Kabir, Shahriar; Siddiqui, Aminul Haque (BRAC University, 2016)
    This paper analyses the C-V characteristics by altering the gate oxide thickness and metal workfunction used in the gate of non-planer, multi-gate InGaAs channel Quantum Well Field-Effect Transistor (QWFET). In this paper, ...

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    AuthorAfsin, Muntasirul Haque (1)Kabir, Shahriar (1)Siddiqui, Aminul Haque (1)Subject
    Electrical and electronic engineering (1)
    Quantum Well Field-Effect Transistor (QWFET) (1)... View MoreDate Issued
    2016 (1)
    Has File(s)Yes (1)

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